Progress in performance development of room temperature direct terahertz detectors

In this paper issues, associated with the development of THz direct detectors and focal plane arrays in the last decade are discussed. After short description of general classification of THz detectors, more details concern Schottky barrier diodes, CMOS-based detectors, microbolometers, and field-ef...

Full description

Saved in:
Bibliographic Details
Published inJournal of infrared, millimeter and terahertz waves Vol. 43; no. 9-10; pp. 709 - 727
Main Author Rogalski, A.
Format Journal Article
LanguageEnglish
Published New York Springer US 01.09.2022
Springer Nature B.V
Subjects
Bandwidths
Classical Electrodynamics
Detectors
Electrical Engineering
Electronics and Microelectronics
Engineering
Field effect transistors
Focal plane devices
Graphene
Instrumentation
Invited Review Article
Micromachining
Noise
Power
Room temperature
Schottky diodes
Semiconductor devices
Sensors
Spectrum allocation
Two dimensional materials
2D material photo detectors
Thermal detectors
Photon detectors
Uncooled focal plane arrays
Online AccessGet full text

Cover

More Information
Summary:In this paper issues, associated with the development of THz direct detectors and focal plane arrays in the last decade are discussed. After short description of general classification of THz detectors, more details concern Schottky barrier diodes, CMOS-based detectors, microbolometers, and field-effect transistor detectors, where links between THz devices and modern technologies such as micromachining are underlined. Special attention has been paid to the development of detectors made of two-dimensional materials. Their performance is comparable to that presented for classical terahertz detectors. It is shown that applications of nanoscale materials and devices, in particular, made of two-dimensional materials, open the door for further performance improvement of THz detectors operated at room temperature.
ISSN:1866-6892
1866-6906
DOI:10.1007/s10762-022-00882-2