A Compact and High-Linearity 140-160 GHz Active Phase Shifter in 55 nm BiCMOS

This letter presents the design of a 140-160 GHz vector-modulator-type phase shifter, integrated in a 55-nm BiCMOS technology. The circuit is optimized to minimize the occupied area and maximize the linearity, facilitating its integration in D-band phased arrays. Test results show an average inserti...

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Bibliographic Details
Published inIEEE microwave and wireless components letters Vol. 31; no. 2; pp. 157 - 160
Main Authors Rio, David del, Gurutzeaga, Inaki, Berenguer, Roc, Huhtinen, Ismo, Sevillano, Juan Francisco
Format Journal Article
LanguageEnglish
Published IEEE 01.02.2021
Subjects
BiCMOS
BiCMOS integrated circuits
Couplers
Gain
Insertion loss
Linearity
millimeter-wave (mmW)
phase shifter (PS)
Phased arrays
radio frequency integrated circuit (RFIC)
Transistors
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Summary:This letter presents the design of a 140-160 GHz vector-modulator-type phase shifter, integrated in a 55-nm BiCMOS technology. The circuit is optimized to minimize the occupied area and maximize the linearity, facilitating its integration in D-band phased arrays. Test results show an average insertion loss of 4.5 dB, an OP 1 dB of −3.7 dBm, and rms gain/phase errors lower than 1.4 dB and 7.5°. The circuit core occupies 0.05 mm 2 , consuming less than 66 mW of dc power.
ISSN:1531-1309
1558-1764
DOI:10.1109/LMWC.2020.3037162