Ultraviolet emissions realized in ZnO via an avalanche multiplication process

Au/MgO/ZnO/MgO/Au structures have been designed and constructed in this study. Under a bias voltage, a carrier avalanche multiplication will occur via an impact ionization process in the MgO layer. The generated holes will be drifted into the ZnO layer, and recombine radiatively with the electrons i...

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Published inChinese physics B Vol. 22; no. 7; pp. 41 - 44
Main Author 于吉 单崇新 申赫 张祥伟 王双鹏 申德振
Format Journal Article
LanguageEnglish
Published 01.07.2013
Subjects
Avalanches
Carriers
Electric potential
Emission
Magnesium oxide
Multiplication
Ultraviolet emission
Voltage
Zinc oxide
ZnO
倍增
偏置电压
排放
电子辐射
电离过程
紫外线
雪崩
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ISSN1674-1056
2058-3834
1741-4199
DOI10.1088/1674-1056/22/7/077307

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Summary:Au/MgO/ZnO/MgO/Au structures have been designed and constructed in this study. Under a bias voltage, a carrier avalanche multiplication will occur via an impact ionization process in the MgO layer. The generated holes will be drifted into the ZnO layer, and recombine radiatively with the electrons in the ZnO layer. Thus obvious emissions at around 387 nm coming from the near-band-edge emission of ZnO will be observed. The reported results demonstrate the ultraviolet （UV） emission realized via a carrier multiplication process, and so may provide an alternative route to efficient UV emissions by bypassing the challenging p-type doping issue of ZnO.
Bibliography:Yu Ji, Shan Chong-Xin, Shen He, Zhang Xiang-Wei, Wang Shuang-Peng, and Shen De-Zhen a） State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China b） University of Chinese Academy of Sciences, Beijing 100049, China
avalanche multiplication;wide bandgap semiconductor;light-emitting devices
11-5639/O4
Au/MgO/ZnO/MgO/Au structures have been designed and constructed in this study. Under a bias voltage, a carrier avalanche multiplication will occur via an impact ionization process in the MgO layer. The generated holes will be drifted into the ZnO layer, and recombine radiatively with the electrons in the ZnO layer. Thus obvious emissions at around 387 nm coming from the near-band-edge emission of ZnO will be observed. The reported results demonstrate the ultraviolet （UV） emission realized via a carrier multiplication process, and so may provide an alternative route to efficient UV emissions by bypassing the challenging p-type doping issue of ZnO.
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ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/22/7/077307