G-Band Distributed Microelectromechanical Components Based on CMOS Compatible Fabrication
Microelectromechanical systems (MEMS) technology has been used for realizing G-band (140-220 GHz) distributed MEMS transmission line components. Novel dielectric-less MEMS components, as well as switched MEMS capacitors, have been fabricated with CMOS compatible surface micromachining, and experimen...
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Published in | IEEE transactions on microwave theory and techniques Vol. 56; no. 3; pp. 720 - 728 |
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Main Authors | , |
Format | Journal Article |
Language | English |
Published |
New York, NY
IEEE
01.03.2008
Institute of Electrical and Electronics Engineers |
Subjects | |
Online Access | Get full text |
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Summary: | Microelectromechanical systems (MEMS) technology has been used for realizing G-band (140-220 GHz) distributed MEMS transmission line components. Novel dielectric-less MEMS components, as well as switched MEMS capacitors, have been fabricated with CMOS compatible surface micromachining, and experimental results are presented up to 220 GHz. |
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ISSN: | 0018-9480 1557-9670 |
DOI: | 10.1109/TMTT.2008.916885 |