G-Band Distributed Microelectromechanical Components Based on CMOS Compatible Fabrication

• Published in: IEEE transactions on microwave theory and techniques Vol. 56; no. 3; pp. 720 - 728
• Main Authors: Vaha-Heikkila, T., Ylonen, M.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.03.2008; Institute of Electrical and Electronics Engineers
• Subjects: Applied sciences; Capacitors; Circuit properties; CMOS; Coplanar waveguides; Design. Technologies. Operation analysis. Testing; Dielectric, amorphous and glass solid devices; Dielectrics; Electric, optical and optoelectronic circuits; Electronics; Exact sciences and technology; Fabrication; G -band; Impedance; Integrated circuits; Micro- and nanoelectromechanical devices (mems/nems); microelectromechanical systems (MEMS); Micromechanical devices; Microswitches; Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits; Phase shifters; RF MEMS; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; varactor; Varactors; Wideband; microelectromechanical systems (MEMS); Micromachining; G-band; Switching; CMOS; Microelectronic fabrication; Varactor diode; Transmission line; RF MEMS; Complementary MOS technology; varactor; Capacitor; Microelectromechanical device
• ISSN: 0018-9480; 1557-9670
• DOI: 10.1109/TMTT.2008.916885

Microelectromechanical systems (MEMS) technology has been used for realizing G-band (140-220 GHz) distributed MEMS transmission line components. Novel dielectric-less MEMS components, as well as switched MEMS capacitors, have been fabricated with CMOS compatible surface micromachining, and experimental results are presented up to 220 GHz.