A 1.9-dB NF K-Band Temperature-Healing Phased-Array Receiver Employing Hybrid Packaged 65-nm CMOS Beamformer and 0.1-μm GaAs LNAs

A 1.9-dB NF K-band phased-array receiver (RX) is presented, which employs the hybrid packaged 65-nm CMOS beamformer and 0.1-<inline-formula> <tex-math notation="LaTeX">\mu \text{m} </tex-math></inline-formula> GaAs LNAs based on the fan-out wafer-level chip-scale pa...

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Bibliographic Details
Published inIEEE microwave and wireless components letters Vol. 32; no. 6; pp. 768 - 771
Main Authors Zhao, Dixian, Gu, Peng, Zhang, Jiajun, Yi, Yongran, Yang, Mengru, Xu, Chenyu, Chai, Yuan, Liu, Huiqi, He, Pingyang, Peng, Na, Liu, Liangliang, Yan, Xiangxi, You, Xiaohu
Format Journal Article
LanguageEnglish
Published IEEE 01.06.2022
Subjects
5G mobile communication
CMOS beamformer
Gain
Gain measurement
Gallium arsenide
K-band
low noise
Noise measurement
phased-array
satellite communication
temperature healing
Temperature measurement
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Summary:A 1.9-dB NF K-band phased-array receiver (RX) is presented, which employs the hybrid packaged 65-nm CMOS beamformer and 0.1-<inline-formula> <tex-math notation="LaTeX">\mu \text{m} </tex-math></inline-formula> GaAs LNAs based on the fan-out wafer-level chip-scale packaging (WLCSP) technology. Power-efficient gain and phase tuning blocks are utilized to reduce power consumption. Temperature-healing design methodology is adopted to ensure nearly constant gain response versus temperature variations. The proposed phased-array RX only consumes 30.2-mW dc power per channel and achieves < 1.2-dB gain variation and < 0.9-dB NF variation from −40 °C to 85 °C.
ISSN:1531-1309
1558-1764
DOI:10.1109/LMWC.2022.3161642