0.5 THz Performance of a Type-II DHBT With a Doping-Graded and Constant-Composition GaAsSb Base

• Published in: IEEE electron device letters Vol. 35; no. 1; pp. 24 - 26
• Main Authors: Huiming Xu, Wu, Barry, Iverson, Eric W., Low, Thomas S., Feng, Milton
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.01.2014; Institute of Electrical and Electronics Engineers
• Subjects: Applied sciences; Cross-disciplinary physics: materials science; rheology; DHBT; Doping; doping graded; Electronics; Exact sciences and technology; GaAsSb; Indium phosphide; InP; Integrated circuits; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Microelectronic fabrication (materials and surfaces technology); millimeter-wave; Molecular, atomic, ion, and chemical beam epitaxy; Performance evaluation; Physics; Radio frequency; Resistance; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Silicon; Transistors; Ternary compound; Performance evaluation; Gallium arsenides; Binary compound; Gallium antimonides; Doping; Microwave; Transmitter; DHBT; InP; millimeter-wave; III-V compound; Indium phosphide; Terms—GaAsSb; Millimetric wave; Microelectronic fabrication; Wet process; doping graded; Functionnally graded material; Molecular beam epitaxy; Heterojunction bipolar transistors; MESA technology; Base collector junction
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2013.2290299

A type-II GaAsSb Double Heterojunction Bipolar Transistor (DHBT) with an AlInP emitter, doping-graded GaAsSb base, and InP collector has been grown by molecular beam epitaxy. The 0.38 μm emitter devices have been fabricated by a triple-mesa wet etch process and demonstrated f T /f MAX =470/540 GHz at J C =5.1 mA/μm 2 and V CB =0.65 V. This performance is comparable with composition-graded base devices with similar emitter width.