Subbandgap Optical Differential Body-Factor Technique and Characterization of Interface States in SOI MOSFETs

• Published in: IEEE electron device letters Vol. 33; no. 7; pp. 922 - 924
• Main Authors: EUIYOUN HONG, YUN, Daeyoun, DONG MYONG KIM, BAE, Hagyoul, HYUNJUN CHOI, WON HEE LEE, UHM, Mihee, SEO, Hyojoon, LEE, Jieun, JAEMAN JANG, DAE HWAN KIM
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.07.2012; Institute of Electrical and Electronics Engineers
• Subjects: Applied sciences; Differential body factor; Electronics; Exact sciences and technology; Interface states; Logic gates; Optical pumping; Optical sensors; Photonic band gap; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; silicon on insulator (SOI); subbandgap optical illumination; subthreshold slope; Threshold voltage; Transistors; Voltage threshold; MOS technology; Interface state; MOSFET; Voltage current curve; U shape; n channel; Differential body factor; Silicon on insulator technology; subthreshold slope; p channel; subbandgap optical illumination; interface states; Illumination; Wafer; silicon on insulator (SOI)
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2012.2194981

A distribution of interface states ( D it ) in SOI MOSFETs has been characterized by a subbandgap optical differential body-factor (SODBoF) technique. We adopted a subbandgap ( E ph <; E g ) optical source as a virtual gate on the body-contactless SOI MOSFETs under the subthreshold ( V GS <; V T ) current-voltage characteristics. Employing a differentiation to the body factor, any possible error from the threshold voltage is also suppressed. We applied the SODBoF technique to n- and p-channel SOI MOSFETs on the same wafer and verified the result. Extracted traps over the bandgap ranges D it = 10 10 - 10 11 cm -2 ·eV -1 with a typical U-shape.