Subbandgap Optical Differential Body-Factor Technique and Characterization of Interface States in SOI MOSFETs
A distribution of interface states ( D it ) in SOI MOSFETs has been characterized by a subbandgap optical differential body-factor (SODBoF) technique. We adopted a subbandgap ( E ph <; E g ) optical source as a virtual gate on the body-contactless SOI MOSFETs under the subthreshold ( V GS <; V...
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Published in | IEEE electron device letters Vol. 33; no. 7; pp. 922 - 924 |
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Main Authors | , , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
New York, NY
IEEE
01.07.2012
Institute of Electrical and Electronics Engineers |
Subjects | |
Online Access | Get full text |
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Summary: | A distribution of interface states ( D it ) in SOI MOSFETs has been characterized by a subbandgap optical differential body-factor (SODBoF) technique. We adopted a subbandgap ( E ph <; E g ) optical source as a virtual gate on the body-contactless SOI MOSFETs under the subthreshold ( V GS <; V T ) current-voltage characteristics. Employing a differentiation to the body factor, any possible error from the threshold voltage is also suppressed. We applied the SODBoF technique to n- and p-channel SOI MOSFETs on the same wafer and verified the result. Extracted traps over the bandgap ranges D it = 10 10 - 10 11 cm -2 ·eV -1 with a typical U-shape. |
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ISSN: | 0741-3106 1558-0563 |
DOI: | 10.1109/LED.2012.2194981 |