High Temperature Characteristics of GaN-Based Inverter Integrated With Enhancement-Mode (E-Mode) MOSFET and Depletion-Mode (D-Mode) HEMT

• Published in: IEEE electron device letters Vol. 35; no. 1; pp. 33 - 35
• Main Authors: Xu, Zhe, Wang, Jinyan, Cai, Yong, Liu, Jingqian, Yang, Zhen, Li, Xiaoping, Wang, Maojun, Yu, Min, Xie, Bing, Wu, Wengang, Ma, Xiaohua, Zhang, Jincheng, Hao, Yue
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.01.2014; Institute of Electrical and Electronics Engineers
• Subjects: Applied sciences; DCFL; Electrical engineering. Electrical power engineering; Electronic equipment and fabrication. Passive components, printed wiring boards, connectics; Electronics; Exact sciences and technology; Gallium nitride; GaN; HEMTs; inverter; Inverters; Logic gates; MOSFET; Power electronics, power supplies; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; small variations; Temperature; Threshold voltage; Transistors; Thermal characteristic; Inverter; Voltage threshold; MOS technology; MOSFET; Binary compound; Depletion mode; Low noise circuit; Power supply; Power electronics; High temperature; Gallium nitride; III-V compound; Enhancement mode; High electron mobility transistor; GaN; small variations; DCFL; Room temperature
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2013.2291854

High temperature characteristics of GaN-based inverter is presented from room temperature (RT) to 300 °C, which is integrated with enhancement-mode MOSFET and depletion-mode HEMT. At 300 °C, the fabricated inverter operates properly at a supply voltage (V DD ) of 7 V with 6.5 V for logic voltage swing, 3.3 V for threshold voltage (V TH ), 2.4 V for logic-low noise margin (NM L ), and 3.4 V for logic-high noise margin (NM H ). Meanwhile, the inverter exhibits small variations from RT to 300 °C in terms of logic voltage swing, V TH , NM L , and NM H with the maximum relative variations of 2.2%, 5.7%, 12.9%, and 4.9% in such temperature range, respectively.