A 21-41-GHz Common-Gate LNA With TLT Matching Networks in 28-nm FDSOI CMOS

A wideband common-gate (CG) cascode low-noise amplifier (LNA) is demonstrated with a 28-nm fully depleted silicon on insulator (FDSOI) CMOS process. Wide bandwidth is achieved with a CG structure in the first stage and tightly coupled (<inline-formula> <tex-math notation="LaTeX"&g...

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Bibliographic Details
Published inIEEE microwave and wireless components letters Vol. 32; no. 9; pp. 1051 - 1054
Main Authors Lee, Jooeun, Hong, Songcheol
Format Journal Article
LanguageEnglish
Published IEEE 01.09.2022
Subjects
5G communication
5G mobile communication
beamforming
coupled resonator
Gain
Inductors
Linearity
low noise amplifier (LNA)
millimeter-wave
Noise measurement
Silicon-on-insulator
Wideband
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Summary:A wideband common-gate (CG) cascode low-noise amplifier (LNA) is demonstrated with a 28-nm fully depleted silicon on insulator (FDSOI) CMOS process. Wide bandwidth is achieved with a CG structure in the first stage and tightly coupled (<inline-formula> <tex-math notation="LaTeX">k=0.86 </tex-math></inline-formula>) transmission line transformer (TLT) matching networks. A gm-boosting technique with cross-coupled capacitors improves the gain and noise figure (NF) of the CG amplifier. A high-input 1-dB gain compression point (IP1 dB) can be achieved by introducing an inter-stage inductor at the second-stage cascode amplifier. The LNA shows 19.3 dB gain, 3.1 dB NF, 19.8 GHz (63%) of 3 dB bandwidth, and −15.7 dBm IP1 dB at 28 GHz.
ISSN:1531-1309
1558-1764
DOI:10.1109/LMWC.2022.3169066