Error-Free Matthiessen's Rule in the MOSFET Universal Mobility Region

• Published in: IEEE transactions on electron devices Vol. 60; no. 2; pp. 753 - 758
• Main Authors: CHEN, Ming-Jer, LEE, Wei-Han, HUANG, Yi-Hui
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.02.2013; Institute of Electrical and Electronics Engineers
• Subjects: Applied sciences; Doping; Electron devices; Electronics; Exact sciences and technology; Matthiessen's rule; metal-oxide-semiconductor field-effect transistors (MOSFETs); mobility; Scattering; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Semiconductor process modeling; Silicon; simulation; strain; Substrates; Transistors; universal mobility; MOS technology; strain; MOSFET; universal mobility; mobility; Matthiessen's rule; simulation; Impurity scattering; n channel; Subband; Empirical model; Inversion layer; Thin film; Coulomb scattering; scattering; Concentration effect; model; Semiempirical method; metal-oxide-semiconductor field-effect transistors (MOSFETs)
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2012.2233202

Through the experimentally validated inversion-layer mobility simulation, we devise an error-free version of Matthiessen's rule for a single-gate n-channel bulk MOSFET in the universal mobility region. The core of the new rule lies in a semi-empirical model, which explicitly expresses the errors due to the conventional use of Matthiessen's rule as a function of both the lowest subband population and the relative strength of individual mobility components. The model holds under practical conditions (with temperatures up to 400 K) and in a broad range of substrate doping concentrations (10 14 to 10 18 cm -3 ). To make the error-free proposal more general, we elaborate on several issues, including strain, impurity Coulomb scattering, and remote scattering. The thin-film case can be treated accordingly.