A W-Band 1-dB Insertion Loss Wilkinson Power Divider Using Silicon-Based Integrated Passive Device

This work presents an on-chip Wilkinson power divider using silicon-based integrated passive device (IPD) technology that operates from 70 to 110 GHz, thereby covering the entire <inline-formula> <tex-math notation="LaTeX">W </tex-math></inline-formula>-band (75-110...

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Bibliographic Details
Published inIEEE microwave and wireless components letters Vol. 31; no. 6; pp. 654 - 657
Main Authors Hsiao, Chiao-Yun, Wu, Chung-Tse Michael, Kuo, Chien-Nan
Format Journal Article
LanguageEnglish
Published IEEE 01.06.2021
Subjects
<italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">W -band
Impedance
Integrated passive device (IPD)
Microwave circuits
millimeter-wave (mm-wave)
on-chip coupler
Power dividers
Silicon
System-on-chip
Transmission line measurements
Wilkinson power divider
Wireless communication
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Summary:This work presents an on-chip Wilkinson power divider using silicon-based integrated passive device (IPD) technology that operates from 70 to 110 GHz, thereby covering the entire <inline-formula> <tex-math notation="LaTeX">W </tex-math></inline-formula>-band (75-110 GHz). Based on a simple impedance transformation different from the conventional Wilkinson power divider topology, the proposed silicon IPD power divider with a core size of 0.417 mm 2 can demonstrate power loss of less than 1.1 dB along with input-output return loss better than 14 dB throughout the entire band.
ISSN:1531-1309
1558-1764
DOI:10.1109/LMWC.2021.3066344