Temporal Spin Splitter Based on an Antiparallel Double δ-Magnetic-Barrier Nanostructure

We theoretically investigate the dwell time for electrons in an antiparallel double <inline-formula> <tex-math notation="LaTeX">\delta </tex-math></inline-formula>-magnetic-barrier nanostructure, which is constructed on the surface of the InAs/Al x In 1- x As hetero...

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Bibliographic Details
Published inIEEE transactions on magnetics Vol. 57; no. 6; pp. 1 - 5
Main Authors Zhang, Gui-Lian, Lu, Mao-Wang, Chen, Sai-Yan, Peng, Fang-Fang, Meng, Jing-Song
Format Journal Article
LanguageEnglish
Published New York IEEE 01.06.2021
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Antiparallel double δ-magnetic-barrier nanostructure
Dwell time
Electron spin
Ferromagnetism
Frequency modulation
Heterostructures
Magnetic confinement
Magnetic domains
Magnetic separation
Magnetism
Nanostructure
Polarization (spin alignment)
Semiconductor nanostructures
spin polarization
Spintronics
temporal spin splitter
Time dependence
Wave functions
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Summary:We theoretically investigate the dwell time for electrons in an antiparallel double <inline-formula> <tex-math notation="LaTeX">\delta </tex-math></inline-formula>-magnetic-barrier nanostructure, which is constructed on the surface of the InAs/Al x In 1- x As heterostructure by patterning two ferromagnetic (FM) stripes. It is shown that the dwell time is dependent on electron spins due to the spin-field interaction between spins and magnetic fields. It is also shown that both magnitude and sign of the spin polarization in the dwell time can be modulated by the structural width or magnetic-strength difference between two magnetic barriers, which may give rise to a controllable temporal spin splitter for spintronics device applications.
Bibliography:ObjectType-Article-1
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ISSN:0018-9464
1941-0069
DOI:10.1109/TMAG.2021.3069352