Spatial Composition Grading of Binary Metal Alloy Gate Electrode for Short-Channel SOI/SON MOSFET Application

• Published in: IEEE transactions on electron devices Vol. 59; no. 12; pp. 3280 - 3287
• Main Authors: Manna, B., Sarkhel, S., Islam, N., Sarkar, S., Sarkar, S. K.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.12.2012; Institute of Electrical and Electronics Engineers
• Subjects: Applied sciences; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Drain-induced barrier lowering (DIBL); Electric potential; Electrodes; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronics; Exact sciences and technology; Logic gates; MOSFET circuits; Physics; Poisson equations; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Silicon; silicon-on-insulator (SOI)/silicon-on-nothing (SON) MOSFET; subthreshold slope; Surface double layers, schottky barriers, and work functions; Threshold voltage; threshold voltage rolloff; Transistors; work function engineering; Performance evaluation; Voltage threshold; MOS technology; MOSFET; silicon-on-insulator (SOI)/silicon-on-nothing (SON) MOSFET; Short channel; Transistor gate; Poisson equation; work function engineering; threshold voltage rolloff; Implementation; Silicon on insulator technology; subthreshold slope; Work function; Analytical method; Drain-induced barrier lowering (DIBL); Comparative study; Silicon on nothing technology; DIBL effect; Binary alloy
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2012.2220143

An overall performance comparison analysis based on 2-D Poisson's equation solution has been presented here both for silicon-on-insulator (SOI) and silicon-on-nothing (SON) MOSFET structures. In this paper, for the first time, an idea of work function engineering with continuous horizontal mole fraction variation in a binary alloy gate has been proposed and implemented analytically to reduce rolloff in threshold voltage for SON MOSFET, thereby improving its performance over single-gate SON structures. Analytical model-based simulation verified that SON is superior over SOI MOSFET due to its higher immunity to different short-channel effects and increased current driving capability. Our results are found to be in good agreement with simulation results, thereby verifying the accuracy of the proposed analytical model.