Fully Integrated GaN-on-Silicon Gate Driver and GaN Switch With Temperature-Compensated Fast Turn-on Technique for Achieving Switching Frequency of 50 MHz and Slew Rate of 118.3 V/Ns

• Published in: IEEE journal of solid-state circuits Vol. 56; no. 12; pp. 3619 - 3627
• Main Authors: Kao, Yu-Yung, Hung, Sheng-Hsi, Chen, Hsuan-Yu, Lee, Jia-Jyun, Chen, Ke-Horng, Lin, Ying-Hsi, Lin, Shian-Ru, Tsai, Tsung-Yen
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.12.2021; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Circuits; Controllers; Depletion; Electric potential; Fast turn-on (FTO) technique; Gallium nitride; Gallium nitride (GaN); Gallium nitrides; HEMTs; Logic gates; miller plateau voltage; Pulse width modulation; Slew rate; Switches; Switching; Temperature measurement; temperature-compensated (T-compensated); Threshold voltage; Voltage; Voltage control
• ISSN: 0018-9200; 1558-173X
• DOI: 10.1109/JSSC.2021.3103875

In this article, a monolithically integrated driver fabricated by 12-V depletion mode gallium nitride (dGaN) and enhanced mode GaN (eGaN) driver is proposed. The proposed driver features an internal temperature-compensated (T-compensated) controller to drive an integrated 650-V eGaN power switch. Due to T-compensated characteristics, a slew-rate enhancement driver can be well-controlled by the fast turn-on (FTO) technique which is supplied by an on-chip regulator with reference voltage circuit. Therefore, the Miller plateau voltage can be tracked correctly by the proposed controller so that the switching frequency can be raised up to 50 MHz and the <inline-formula> <tex-math notation="LaTeX">\textit {dV}_{\mathrm {DS}} </tex-math></inline-formula>/ dt slew rate can reach 118.3 V/ns for high efficiency and high switching operation.