A Novel Active Gate Driver for Improving Switching Performance of High-Power SiC MOSFET Modules

Featuring higher switching speed and lower losses, the silicon carbide mosfet s (SiC mosfet s) are widely used in higher power density and higher efficiency power electronic applications as a new solution. However, the increase of the switching speed induces oscillations, overshoots, electromagnetic...

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Published inIEEE transactions on power electronics Vol. 34; no. 8; pp. 7775 - 7787
Main Authors Yang, Yuan, Wen, Yang, Gao, Yong
Format Journal Article
LanguageEnglish
Published New York IEEE 01.08.2019
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Active gate driver (AGD)
Cost analysis
Delay time analysis
Electric potential
Electromagnetic interference
electromagnetic interference (EMI)
Gate drivers
Logic gates
MOSFET
MOSFETs
Oscillations
Oscillators
overshoots
Power efficiency
Silicon carbide
silicon carbide (SiC) <sc xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">mosfet
Switches
Switching
Online AccessGet full text
ISSN0885-8993
1941-0107
DOI10.1109/TPEL.2018.2878779

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Abstract Featuring higher switching speed and lower losses, the silicon carbide mosfet s (SiC mosfet s) are widely used in higher power density and higher efficiency power electronic applications as a new solution. However, the increase of the switching speed induces oscillations, overshoots, electromagnetic interference (EMI), and even additional losses. In this paper, a novel active gate driver (AGD) for high-power SiC mosfet s is presented to fully utilize its potential of high-speed characteristic under different operation temperatures and load currents. The principle of the AGD is based on drive voltage decrement during the voltage and current slopes since high dV/dt and dI/dt are the source of the overshoots, oscillations, and EMI problems. In addition, the optimal drive voltage switching delay time has been analyzed and calculated considering a tradeoff between switching losses and switching stresses. Compared to conventional gate driver with fixed drive voltage, the proposed AGD has the capability of suppressing the overshoots, oscillations, and reducing losses without compromising the EMI. Finally, the switching performance of the AGD was experimentally verified on 1.2 kV/300 A and 1.7 kV/300 A SiC mosfet s in double pulse test under different operation temperatures and load currents. In addition, an EMI discussion and cost analysis were realized for AGD.
AbstractList Featuring higher switching speed and lower losses, the silicon carbide mosfet s (SiC mosfet s) are widely used in higher power density and higher efficiency power electronic applications as a new solution. However, the increase of the switching speed induces oscillations, overshoots, electromagnetic interference (EMI), and even additional losses. In this paper, a novel active gate driver (AGD) for high-power SiC mosfet s is presented to fully utilize its potential of high-speed characteristic under different operation temperatures and load currents. The principle of the AGD is based on drive voltage decrement during the voltage and current slopes since high dV/dt and dI/dt are the source of the overshoots, oscillations, and EMI problems. In addition, the optimal drive voltage switching delay time has been analyzed and calculated considering a tradeoff between switching losses and switching stresses. Compared to conventional gate driver with fixed drive voltage, the proposed AGD has the capability of suppressing the overshoots, oscillations, and reducing losses without compromising the EMI. Finally, the switching performance of the AGD was experimentally verified on 1.2 kV/300 A and 1.7 kV/300 A SiC mosfet s in double pulse test under different operation temperatures and load currents. In addition, an EMI discussion and cost analysis were realized for AGD.
Featuring higher switching speed and lower losses, the silicon carbide mosfet s (SiC mosfet s) are widely used in higher power density and higher efficiency power electronic applications as a new solution. However, the increase of the switching speed induces oscillations, overshoots, electromagnetic interference (EMI), and even additional losses. In this paper, a novel active gate driver (AGD) for high-power SiC mosfet s is presented to fully utilize its potential of high-speed characteristic under different operation temperatures and load currents. The principle of the AGD is based on drive voltage decrement during the voltage and current slopes since high dV/dt and dI/dt are the source of the overshoots, oscillations, and EMI problems. In addition, the optimal drive voltage switching delay time has been analyzed and calculated considering a tradeoff between switching losses and switching stresses. Compared to conventional gate driver with fixed drive voltage, the proposed AGD has the capability of suppressing the overshoots, oscillations, and reducing losses without compromising the EMI. Finally, the switching performance of the AGD was experimentally verified on 1.2 kV/300 A and 1.7 kV/300 A SiC mosfet s in double pulse test under different operation temperatures and load currents. In addition, an EMI discussion and cost analysis were realized for AGD.
Author Yang, Yuan
Wen, Yang
Gao, Yong
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Snippet Featuring higher switching speed and lower losses, the silicon carbide mosfet s (SiC mosfet s) are widely used in higher power density and higher efficiency...
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SubjectTerms Active gate driver (AGD)
Cost analysis
Delay time analysis
Electric potential
Electromagnetic interference
electromagnetic interference (EMI)
Gate drivers
Logic gates
MOSFET
MOSFETs
Oscillations
Oscillators
overshoots
Power efficiency
Silicon carbide
silicon carbide (SiC) <sc xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">mosfet
Switches
Switching
Title A Novel Active Gate Driver for Improving Switching Performance of High-Power SiC MOSFET Modules
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