APA (7th ed.) Citation

Yang, Y., Wen, Y., & Gao, Y. (2019). A Novel Active Gate Driver for Improving Switching Performance of High-Power SiC MOSFET Modules. IEEE transactions on power electronics, 34(8), 7775-7787. https://doi.org/10.1109/TPEL.2018.2878779

Chicago Style (17th ed.) Citation

Yang, Yuan, Yang Wen, and Yong Gao. "A Novel Active Gate Driver for Improving Switching Performance of High-Power SiC MOSFET Modules." IEEE Transactions on Power Electronics 34, no. 8 (2019): 7775-7787. https://doi.org/10.1109/TPEL.2018.2878779.

MLA (9th ed.) Citation

Yang, Yuan, et al. "A Novel Active Gate Driver for Improving Switching Performance of High-Power SiC MOSFET Modules." IEEE Transactions on Power Electronics, vol. 34, no. 8, 2019, pp. 7775-7787, https://doi.org/10.1109/TPEL.2018.2878779.