Influence of Plasma Treatment on Physical Properties of Thin SnO2 Films Obtained from SnCl4 Solutions with Additions of NH4F and NH4OH

• Published in: Eurasian chemico-technological journal Vol. 21; no. 1; pp. 57 - 61
• Main Authors: Mukhamedshina, D.M., Fedosimova, A.I., Dmitriyeva, E.A., Lebedev, I.A., Grushevskaya, E.A., Ibraimova, S.A., Mit’, K.A., Serikkanov, A.S.
• Format: Journal Article
• Language: English
• Published: al-Farabi Kazakh National University 01.01.2019
• Subjects: fluorine doping; hydrogen plasma; oxygen plasma; SnO2 film; surface resistance; transmission spectra
• ISSN: 2522-4867; 1562-3920; 2522-4867
• DOI: 10.18321/ectj791

This paper considers the effect of oxygen and hydrogen plasma on SnO2 films synthesized from solutions of tin tetrachloride containing NH4F and NH4OH additives. It was found that the treatment of samples with oxygen plasma for 5 min led to a decrease in transparency by 1.11 and 1.17 times. On the transmission spectra, a decrease in the transmittance at a wavelength of 450 nm to 38.1% (1.24 times) in samples obtained from solutions with the addition of NH4F and up to 29.9% (1.53 times) in samples obtained from solutions with the addition of NH4OH is observed. The formation of tin oxide (II) under the influence of the reducing properties of hydrogen plasma is assumed. At the same time, the formation of metal tin from tin dioxide is not observed here. Due to the decreasing of transmission coefficient in the long-wave region of the spectrum. There is an increase in surface resistance after treatment with oxygen plasma, due to filling oxygen vacancies. Treatment of hydrogen plasma films leads to a decrease in surface resistance. Perhaps due to the increase in oxygen vacancies under the influence of hydrogen plasma. Within five minutes, the oxygen and hydrogen plasma had a more active effect on the films obtained from the solution with the addition of ammonium hydroxide, which is associated with a higher porosity of the sample. Consequently, irrespective of the time of plasma exposure with increasing the surface of contact between ionized gases and the film material, the interaction efficiency will increase.