Control of Cu Conductive Filament in Complementary Atom Switch for Cross-Point Selector Device Application

We present a novel approach to realize bidirectional/bipolar current-voltage characteristics for cross-point selector device application. These utilize the instability of Cu ions in filament state for switch elements. The conductive filament instability was controlled by the compliance current with...

Full description

Saved in:
Bibliographic Details
Published inIEEE electron device letters Vol. 35; no. 1; pp. 60 - 62
Main Authors Woo, Jiyong, Lee, Daeseok, Cha, Euijun, Lee, Sangheon, Park, Sangsu, Hwang, Hyunsang
Format Journal Article
LanguageEnglish
Published New York, NY IEEE 01.01.2014
Institute of Electrical and Electronics Engineers
Subjects
access device
Applied sciences
Arrays
atom switch
Atomic measurements
Circuit properties
cross-point array memory
Electric, optical and optoelectronic circuits
Electrodes
Electronic circuits
Electronics
Exact sciences and technology
Ions
Materials
Resistance
Selector device
Switches
Switching, multiplexing, switched capacity circuits
Bidirectional link
Voltage current curve
cross-point array memory
In situ
access device
Selector device
Leakage current
Control device
Selector switch
Copper
atom switch
Implementation
Online AccessGet full text

Cover

Abstract We present a novel approach to realize bidirectional/bipolar current-voltage characteristics for cross-point selector device application. These utilize the instability of Cu ions in filament state for switch elements. The conductive filament instability was controlled by the compliance current with which the filament was formed. For in-situ control of the device, a complementary atom switch concept was implemented. The proposed device presents another attractive selector among the field of bidirectional selectors with the unique attributes such as the extremely low leakage current and the exponentially increased conduction behavior.
AbstractList We present a novel approach to realize bidirectional/bipolar current-voltage characteristics for cross-point selector device application. These utilize the instability of Cu ions in filament state for switch elements. The conductive filament instability was controlled by the compliance current with which the filament was formed. For in-situ control of the device, a complementary atom switch concept was implemented. The proposed device presents another attractive selector among the field of bidirectional selectors with the unique attributes such as the extremely low leakage current and the exponentially increased conduction behavior.
Author Euijun Cha
Hyunsang Hwang
Sangheon Lee
Jiyong Woo
Sangsu Park
Daeseok Lee
Author_xml – sequence: 1
  givenname: Jiyong
  surname: Woo
  fullname: Woo, Jiyong
– sequence: 2
  givenname: Daeseok
  surname: Lee
  fullname: Lee, Daeseok
– sequence: 3
  givenname: Euijun
  surname: Cha
  fullname: Cha, Euijun
– sequence: 4
  givenname: Sangheon
  surname: Lee
  fullname: Lee, Sangheon
– sequence: 5
  givenname: Sangsu
  surname: Park
  fullname: Park, Sangsu
– sequence: 6
  givenname: Hyunsang
  surname: Hwang
  fullname: Hwang, Hyunsang
BackLink http://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=28149794$$DView record in Pascal Francis
BookMark eNo9UE1Lw0AQXaSCbfUueNmLx9TZ7-RY0laFgkL1HJbtLm5JsiHZVvz3bmgpwzDMm_eGx5uhSRtai9AjgQUhULxs16sFBcIWlBZAKNygKREiz0BINkFTUJxkjIC8Q7NhOAAQzhWfokMZ2tiHGgeHyyNO2_5ooj9ZvPG1bmwbsW8T3HS1HTfd_-FlDA3e_fpofrALPS77MAzZZ_CJvLO1NTGBK3vyxuJl19Xe6OhDe49una4H-3CZc_S9WX-Vb9n24_W9XG4zQwsWM0mFZtJwo5iiIPaU0CKVo4yLXIIpnGKcmJyoPeHMWCWFsE6CNCK1ZGyO4PzXjL5666qu900yXhGoxqyqlFU1ZlVdskqS57Ok04PRtet1a_xw1dGc8EIVPPGezjxvrb2epVQcOGf_V7hzBQ
CODEN EDLEDZ
CitedBy_id crossref_primary_10_1002_pssa_201600595
crossref_primary_10_1109_TED_2024_3405403
crossref_primary_10_1002_aelm_202200509
crossref_primary_10_1002_aelm_201900287
crossref_primary_10_1063_1_4961709
crossref_primary_10_1039_D0NR01671C
crossref_primary_10_1021_acsaelm_9b00446
crossref_primary_10_1021_acsami_9b02498
crossref_primary_10_1109_JEDS_2018_2836400
crossref_primary_10_1063_1_4985165
crossref_primary_10_1088_0957_4484_25_42_425202
crossref_primary_10_1002_adfm_201704862
crossref_primary_10_1002_smll_202200185
crossref_primary_10_1021_acs_nanolett_8b04023
crossref_primary_10_1109_TED_2022_3192797
crossref_primary_10_1002_admt_202100373
crossref_primary_10_1088_0022_3727_49_44_445105
crossref_primary_10_1007_s11664_021_08995_5
crossref_primary_10_1088_1674_1056_aba9c7
crossref_primary_10_1016_j_mee_2017_09_001
crossref_primary_10_1002_advs_202401080
crossref_primary_10_1007_s12274_023_5583_4
crossref_primary_10_1149_2_0221603jss
crossref_primary_10_1007_s00339_017_0973_7
crossref_primary_10_1021_acsami_9b08166
crossref_primary_10_1063_5_0124781
Cites_doi 10.1109/IEDM.2011.6131642
10.1063/1.2903707
10.1109/LED.2010.2090127
10.1016/S0167-2738(02)00182-0
10.1109/LED.2011.2161601
10.1109/LED.2012.2209394
10.1038/ncomms3629
10.1109/VLSIT.2010.5556229
10.1088/0957-4484/22/25/254003
10.1038/nmat2748
10.1109/IEDM.2007.4419061
ContentType Journal Article
Copyright 2015 INIST-CNRS
Copyright_xml – notice: 2015 INIST-CNRS
DBID 97E
RIA
RIE
IQODW
AAYXX
CITATION
DOI 10.1109/LED.2013.2290120
DatabaseName IEEE All-Society Periodicals Package (ASPP) 2005-present
IEEE All-Society Periodicals Package (ASPP) 1998-Present
IEEE Xplore
Pascal-Francis
CrossRef
DatabaseTitle CrossRef
DatabaseTitleList
Database_xml – sequence: 1
  dbid: RIE
  name: IEEE Xplore
  url: https://proxy.k.utb.cz/login?url=https://ieeexplore.ieee.org/
  sourceTypes: Publisher
DeliveryMethod fulltext_linktorsrc
Discipline Engineering
Applied Sciences
EISSN 1558-0563
EndPage 62
ExternalDocumentID 10_1109_LED_2013_2290120
28149794
6674044
Genre orig-research
GroupedDBID -~X
.DC
0R~
29I
4.4
5GY
5VS
6IK
97E
AAJGR
AASAJ
ABQJQ
ABVLG
ACGFO
ACIWK
ACNCT
AENEX
AETIX
AFFNX
AI.
AIBXA
AKJIK
ALLEH
ALMA_UNASSIGNED_HOLDINGS
ATWAV
BEFXN
BFFAM
BGNUA
BKEBE
BPEOZ
CS3
DU5
EBS
EJD
HZ~
IBMZZ
ICLAB
IFIPE
IFJZH
IPLJI
JAVBF
LAI
M43
O9-
OCL
P2P
RIA
RIE
RIG
RNS
TAE
TN5
TWZ
VH1
XFK
08R
ABFLS
IPNFZ
IQODW
AAYXX
CITATION
ID FETCH-LOGICAL-c293t-625a36c4c737205d2129292f2345860c9f7341c817d143ce7655ef606c506c633
IEDL.DBID RIE
ISSN 0741-3106
IngestDate Fri Aug 23 03:01:28 EDT 2024
Tue Sep 20 18:49:12 EDT 2022
Wed Jun 26 19:28:12 EDT 2024
IsPeerReviewed true
IsScholarly true
Issue 1
Keywords Bidirectional link
Voltage current curve
cross-point array memory
In situ
access device
Selector device
Leakage current
Control device
Selector switch
Copper
atom switch
Implementation
Language English
License CC BY 4.0
LinkModel DirectLink
MergedId FETCHMERGED-LOGICAL-c293t-625a36c4c737205d2129292f2345860c9f7341c817d143ce7655ef606c506c633
PageCount 3
ParticipantIDs pascalfrancis_primary_28149794
crossref_primary_10_1109_LED_2013_2290120
ieee_primary_6674044
PublicationCentury 2000
PublicationDate 2014-Jan.
2014
2014-01-00
PublicationDateYYYYMMDD 2014-01-01
PublicationDate_xml – month: 01
  year: 2014
  text: 2014-Jan.
PublicationDecade 2010
PublicationPlace New York, NY
PublicationPlace_xml – name: New York, NY
PublicationTitle IEEE electron device letters
PublicationTitleAbbrev LED
PublicationYear 2014
Publisher IEEE
Institute of Electrical and Electronics Engineers
Publisher_xml – name: IEEE
– name: Institute of Electrical and Electronics Engineers
References ref13
ref12
ref11
ref10
woo (ref5) 2013
sasago (ref2) 2009
ref1
ref8
ref7
ref9
ref4
ref3
ref6
References_xml – ident: ref11
  doi: 10.1109/IEDM.2011.6131642
– ident: ref10
  doi: 10.1063/1.2903707
– start-page: 168
  year: 2013
  ident: ref5
  article-title: Multi-layer tunnel barrier <formula formulatype="inline"><tex Notation="TeX">$({\rm Ta}_{2}{\rm O}_{5}/{\rm TaO}_{\rm x}/{\rm TiO}_{2})$</tex></formula> engineering for bipolar RRAM selector applications
  publication-title: Proc Symp VLSI Technol
  contributor:
    fullname: woo
– ident: ref13
  doi: 10.1109/LED.2010.2090127
– ident: ref8
  doi: 10.1016/S0167-2738(02)00182-0
– ident: ref4
  doi: 10.1109/LED.2011.2161601
– ident: ref3
  doi: 10.1109/LED.2012.2209394
– ident: ref6
  doi: 10.1038/ncomms3629
– ident: ref7
  doi: 10.1109/VLSIT.2010.5556229
– ident: ref9
  doi: 10.1088/0957-4484/22/25/254003
– start-page: 24
  year: 2009
  ident: ref2
  article-title: Cross-point phase change memory with <formula formulatype="inline"><tex Notation="TeX">$4{\rm F}^{2}$</tex></formula> cell size driven by low-contact-resistivity poly-Si diode
  publication-title: Proc Symp VLSI Technol
  contributor:
    fullname: sasago
– ident: ref12
  doi: 10.1038/nmat2748
– ident: ref1
  doi: 10.1109/IEDM.2007.4419061
SSID ssj0014474
Score 2.2871149
Snippet We present a novel approach to realize bidirectional/bipolar current-voltage characteristics for cross-point selector device application. These utilize the...
SourceID crossref
pascalfrancis
ieee
SourceType Aggregation Database
Index Database
Publisher
StartPage 60
SubjectTerms access device
Applied sciences
Arrays
atom switch
Atomic measurements
Circuit properties
cross-point array memory
Electric, optical and optoelectronic circuits
Electrodes
Electronic circuits
Electronics
Exact sciences and technology
Ions
Materials
Resistance
Selector device
Switches
Switching, multiplexing, switched capacity circuits
Title Control of Cu Conductive Filament in Complementary Atom Switch for Cross-Point Selector Device Application
URI https://ieeexplore.ieee.org/document/6674044
Volume 35
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjV3NS8MwFH9sO-nBrynOj5GDF8HOrknT9Ti6DREnwhzsVto0gSm2MltE_3pfmq5O8eCh0NI0pO-F934v7wvgwnZkImKmjG3C4khZMUo9y-GqH_FIoobSCc7Te34zZ7cLd9GAqzoXRkpZBp_Jnr4tfflJJgp9VKY79zGbsSY0Pd83uVq1x4AxU3EZNSTKFbt2Sdr-9d14pGO4aE_XNu_rzt4bKqjsqaIjIqM3JIoy3Sw2VMxkF6brxZnIkudekcc98fmrbuN_V78HOxXWJEOzOfahIdMD2N6oQNiGp8CEqpNMkaAg-KTrv6IEJJMl7hWckCxTooVGFWa--iDDPHshs_cl8psg5CWB_kvrIVvi4Jk0bgAykloEkeG3f_wQ5pPxY3BjVe0XLIEYILfQMoooF0yUnWzcBJUcYilHOZS5A24LX3moAsWg7yUIuoT0uOtKhQaRcPHilB5BK81SeQyECYcqzjxb-glTNo0ZjSNKZdL3uPKdqAOXa46Er6bKRlhaJ7YfIvdCzb2w4l4H2pq29biKrB3o_mBh_d4ZoBGIUufk7-9OYQtnZ-ZU5Qxa-aqQ54gz8rhbbrAv6PnOtg
link.rule.ids 315,783,787,799,4033,27937,27938,27939,55088
linkProvider IEEE
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjV1LT4NAEJ5UPagHX9VYn3vwYiKVsstSjg21qdo2JrWJNwLLboLGYiqN0V_vLItYjQcPJBAWWGY2M9_svADObEcmImbK2CYsjpQVo9SzHK5aEY8kaiid4Dwc8f6E3Ty4DzW4qHJhpJRF8Jls6tPCl59kYq63ynTnPmYztgQrrsYVJlur8hkwZmouo45EyWJXTknbvxxcdXUUF23q6uYt3dt7QQkVXVV0TGT0imRRpp_FgpLpbcLwa3omtuSpOc_jpvj4Vbnxv_Pfgo0SbZKOWR7bUJPTHVhfqEFYh8fABKuTTJFgTvBKV4BFGUh6Ka4WfCFJp0SLjTLQfPZOOnn2TMZvKXKcIOglgf5L6y5LcfBYGkcA6UothEjn20O-C5Pe1X3Qt8oGDJZAFJBbaBtFlAsmil42boJqDtGUoxzK3Da3ha88VIKi3fIShF1Cetx1pUKTSLh4cEr3YHmaTeU-ECYcqjjzbOknTNk0ZjSOKJVJy-PKd6IGnH9xJHwxdTbCwj6x_RC5F2ruhSX3GlDXtK3GlWRtwMkPFlb3nTaagSh3Dv5-7hRW-_fDQTi4Ht0ewhp-iZk9liNYzmdzeYyoI49PisX2Cegg0gM
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Control+of+Cu+Conductive+Filament+in+Complementary+Atom+Switch+for+Cross-Point+Selector+Device+Application&rft.jtitle=IEEE+electron+device+letters&rft.au=JIYONG+WOO&rft.au=DAESEOK+LEE&rft.au=EUIJUN+CHA&rft.au=SANGHEON+LEE&rft.date=2014&rft.pub=Institute+of+Electrical+and+Electronics+Engineers&rft.issn=0741-3106&rft.eissn=1558-0563&rft.volume=35&rft.issue=1&rft.spage=60&rft.epage=62&rft_id=info:doi/10.1109%2FLED.2013.2290120&rft.externalDBID=n%2Fa&rft.externalDocID=28149794
thumbnail_l http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0741-3106&client=summon
thumbnail_m http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0741-3106&client=summon
thumbnail_s http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0741-3106&client=summon