Control of Cu Conductive Filament in Complementary Atom Switch for Cross-Point Selector Device Application

We present a novel approach to realize bidirectional/bipolar current-voltage characteristics for cross-point selector device application. These utilize the instability of Cu ions in filament state for switch elements. The conductive filament instability was controlled by the compliance current with...

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Bibliographic Details
Published inIEEE electron device letters Vol. 35; no. 1; pp. 60 - 62
Main Authors Woo, Jiyong, Lee, Daeseok, Cha, Euijun, Lee, Sangheon, Park, Sangsu, Hwang, Hyunsang
Format Journal Article
LanguageEnglish
Published New York, NY IEEE 01.01.2014
Institute of Electrical and Electronics Engineers
Subjects
access device
Applied sciences
Arrays
atom switch
Atomic measurements
Circuit properties
cross-point array memory
Electric, optical and optoelectronic circuits
Electrodes
Electronic circuits
Electronics
Exact sciences and technology
Ions
Materials
Resistance
Selector device
Switches
Switching, multiplexing, switched capacity circuits
Bidirectional link
Voltage current curve
cross-point array memory
In situ
access device
Selector device
Leakage current
Control device
Selector switch
Copper
atom switch
Implementation
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Summary:We present a novel approach to realize bidirectional/bipolar current-voltage characteristics for cross-point selector device application. These utilize the instability of Cu ions in filament state for switch elements. The conductive filament instability was controlled by the compliance current with which the filament was formed. For in-situ control of the device, a complementary atom switch concept was implemented. The proposed device presents another attractive selector among the field of bidirectional selectors with the unique attributes such as the extremely low leakage current and the exponentially increased conduction behavior.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2013.2290120