Improved Performance for Half-Bridge Cells With a Parallel Presspack Diode

In this paper, an IGBT half-bridge with a parallel presspack diode for increased efficiency is investigated. The switching performance and its losses are discussed with respect to its operation in a modular multilevel converter.

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Bibliographic Details
Published inIEEE transactions on power electronics Vol. 34; no. 4; pp. 3091 - 3097
Main Authors Hohmann, Fabian, Bakran, Mark-M.
Format Journal Article
LanguageEnglish
Published New York IEEE 01.04.2019
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Bridge circuits
Converters
HVDC transmission
Inductance
Insulated gate bipolar transistors
Inverters
modular multilevel converter
power semiconductor devices
Rectifiers
Semiconductor diodes
Switches
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Summary:In this paper, an IGBT half-bridge with a parallel presspack diode for increased efficiency is investigated. The switching performance and its losses are discussed with respect to its operation in a modular multilevel converter.
ISSN:0885-8993
1941-0107
DOI:10.1109/TPEL.2018.2849848