Large-Area SiC-UV Photodiode for Spectroscopy Portable System

In this paper, we present the extensive characterization of large-area silicon carbide-based UV sensors candidate for outdoors spectroscopic applications of gas or liquid. The proposed SiC Schottky devices exhibit a dark current density of 0.12 nA/cm 2 at 15 V, a 0.12-A/W responsivity at 300 nm, opt...

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Bibliographic Details
Published inIEEE sensors journal Vol. 19; no. 8; pp. 2931 - 2936
Main Authors Sciuto, A., Giudice, G., D'Arrigo, G., Meli, A., Calcagno, L., Di Franco, S., Mazzillo, M., Franzo, G., Albergo, S., Tricomi, A., Longo, D.
Format Journal Article
LanguageEnglish
Published New York IEEE 15.04.2019
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Blindness
Dark current
Detectors
Large area UV photodetector
Light emitting diodes
Optical filters
optical sensor
Optical sensors
Photodiodes
Schottky diode
SiC detector
Silicon carbide
Spectroscopy
Temperature effects
Temperature measurement
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Summary:In this paper, we present the extensive characterization of large-area silicon carbide-based UV sensors candidate for outdoors spectroscopic applications of gas or liquid. The proposed SiC Schottky devices exhibit a dark current density of 0.12 nA/cm 2 at 15 V, a 0.12-A/W responsivity at 300 nm, optimal visible blindness, and a switching time of ~190 ns. Effects of temperature on the sensor performance, of crucial interest for outdoors applications, are also examined in the range from -20 °C to 90 °C.
ISSN:1530-437X
1558-1748
DOI:10.1109/JSEN.2019.2891833