A Digital Signal Processing Based Detection Circuit for Short-Circuit Protection of SiC MOSFET

A short-circuit detection (SCD) circuit is proposed for power electronics systems that use silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors ( MOSFET s). The proposed SCD circuit incorporates a digital circuit for processing the voltage induced at the parasitic inductance of t...

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Bibliographic Details
Published inIEEE transactions on power electronics Vol. 36; no. 12; pp. 13379 - 13382
Main Authors Lee, Seungjik, Kim, Kihyun, Shim, Minseob, Nam, Ilku
Format Journal Article
LanguageEnglish
Published New York IEEE 01.12.2021
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Analog circuits
Circuit design
Circuit protection
CMOS
Delays
Digital electronics
Digital signal processing
Electric potential
Field effect transistors
Gate driver
Inductance
Latches
Logic gates
MOSFET
MOSFETs
parasitic inductance
Parasitics (electronics)
Power systems
Semiconductor devices
Short circuits
short-circuit detection (SCD)
Signal processing
Silicon carbide
silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (<sc xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">MOSFET)
Voltage
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Summary:A short-circuit detection (SCD) circuit is proposed for power electronics systems that use silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors ( MOSFET s). The proposed SCD circuit incorporates a digital circuit for processing the voltage induced at the parasitic inductance of the source of SiC MOSFET to obtain an improved stable turn- off operation of the SiC MOSFET under SC condition. Compared with that of the conventional analog signal processing based SCD circuits, the proposed circuit has the advantages of having a turn- off operation which is robust to process, voltage, and temperature variations, being fully integrated without the use of external components and ease of design. The proposed circuit was implemented in a 350-nm Bipolar-CMOS-DMOS process. For functional verification, an SC test board integrating the proposed SCD circuit was developed. Experimental result validates that the proposed SCD circuit effectively functions under SC condition.
ISSN:0885-8993
1941-0107
DOI:10.1109/TPEL.2021.3091679