High temperature operated enhancement-type β-SiC MOSFET

• Published in: Japanese Journal of Applied Physics Vol. 27; no. 11; pp. L2143 - L2145
• Main Authors: FUMA, H, MIURA, A, TADANO, H, SUGIYAMA, S, TAKIGAWA, M
• Format: Journal Article
• Language: English
• Published: Tokyo Japanese journal of applied physics 01.11.1988
• Subjects: Applied sciences; Electronics; Exact sciences and technology; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Transistors; Reactive ion etching; MOS transistor; Manufacturing

Enhancement-type β-SiC MOSFETs have been fabricated on a single crystalline β-SiC layer grown on a 3-inch Si(100) substrate by chemical vapor deposition. The MOSFETs fabricated by applying the reactive ion etching technique show reasonable I - V characteristics at room temperature. The saturation te...