High temperature operated enhancement-type β-SiC MOSFET
Enhancement-type β-SiC MOSFETs have been fabricated on a single crystalline β-SiC layer grown on a 3-inch Si(100) substrate by chemical vapor deposition. The MOSFETs fabricated by applying the reactive ion etching technique show reasonable I - V characteristics at room temperature. The saturation te...
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Published in | Japanese Journal of Applied Physics Vol. 27; no. 11; pp. L2143 - L2145 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
Tokyo
Japanese journal of applied physics
01.11.1988
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Subjects | |
Online Access | Get full text |
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Summary: | Enhancement-type β-SiC MOSFETs have been fabricated on a single crystalline β-SiC layer grown on a 3-inch Si(100) substrate by chemical vapor deposition. The MOSFETs fabricated by applying the reactive ion etching technique show reasonable
I
-
V
characteristics at room temperature. The saturation tendency of the drain currents has been observed at a drain voltage as high as 18 V. The MOSFETs operate even at 350°C. |
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ISSN: | 0021-4922 1347-4065 |
DOI: | 10.1143/JJAP.27.L2143 |