An FR4-Based K-Band 1.0-dB Noise Figure LNA Using SISL Technology

• Published in: IEEE microwave and wireless components letters Vol. 32; no. 2; pp. 129 - 132
• Main Authors: Zhang, Jin, Ma, Kaixue, Wang, Yongqiang, Wang, Keping
• Format: Journal Article
• Language: English
• Published: IEEE 01.02.2022
• Subjects: <italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">K -band; Gain; Impedance matching; K-band; low-noise amplifier (LNA); Noise measurement; Power measurement; substrate integrated suspended line (SISL); Substrates; ultralow noise; Wireless communication
• ISSN: 1531-1309; 1558-1764
• DOI: 10.1109/LMWC.2021.3124632

This letter presents an ultralow noise <inline-formula> <tex-math notation="LaTeX">K </tex-math></inline-formula>-band low-noise amplifier (LNA) using substrate integrated suspended line (SISL) technology. A simplified, purely distributed parameter matching network is utilized for simultaneous noise and impedance matching. Different from standard chip-level circuits, a <inline-formula> <tex-math notation="LaTeX">K </tex-math></inline-formula>-band LNA based on board-level platform with low-cost FR4 is proposed. Using the high-<inline-formula> <tex-math notation="LaTeX">Q </tex-math></inline-formula> value of the SISL platform, this LNA shows the advantages of high-power gain, ultralow noise, and self-packaging. According to the measurement, the proposed LNA achieves a 27.7-dB small signal gain with 2.4-GHz 3-dB bandwidth (25-27.4 GHz) and noise figure (NF) of 1.0 dB with 20-mW power dissipation.