A 220-261 GHz Frequency Multiplier Chain (x18) With 8-dBm Peak Output Power in 130-nm SiGe

This letter presents a 220-261-GHz frequency multiplier-by-18 chain in a 130-nm SiGe BiCMOS technology. It consists of three amplifiers (12-15, 110-135, and 216-270 GHz), two frequency triplers (36-45 and 108-135 GHz), a third-order Chebyshev bandpass filter (36-45 GHz), and a modified Gilbert-cell-...

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Bibliographic Details
Published inIEEE microwave and wireless components letters Vol. 32; no. 7; pp. 1 - 4
Main Authors Turkmen, Esref, Aksoyak, Ibrahim Kagan, Debski, Wojciech, Winkler, Wolfgang, Cagri Ulusoy, Ahmet
Format Journal Article
LanguageEnglish
Published IEEE 01.07.2022
Subjects
Band-pass filters
BiCMOS
BiCMOS integrated circuits
frequency doubler
frequency tripler
Harmonic analysis
multiplier chain
Power generation
Power measurement
Power system harmonics
SiGe
Silicon germanium
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Summary:This letter presents a 220-261-GHz frequency multiplier-by-18 chain in a 130-nm SiGe BiCMOS technology. It consists of three amplifiers (12-15, 110-135, and 216-270 GHz), two frequency triplers (36-45 and 108-135 GHz), a third-order Chebyshev bandpass filter (36-45 GHz), and a modified Gilbert-cell-based frequency doubler (216-270 GHz). The peak output power is about 8 dBm at 240 GHz with a 3-dB bandwidth of 41 GHz for an input power of -7 dBm. The unwanted harmonics are suppressed more than 25 dBc over the frequency range of interest. It consumes a dc current of 114.7 mA from a supply voltage of 3.3 V in the quiescent operation and drains a current of 130 mA for an input power of -7 dBm, which results in a drain efficiency of 1.47%. The total circuit occupies an area of 0.58 mm² (1.35 mm x 0.43 mm).
ISSN:1531-1309
1558-1764
DOI:10.1109/LMWC.2022.3154352