Novel Vertical SOI-Based 1T-DRAM With Trench Body Structure

• Published in: IEEE transactions on electron devices Vol. 60; no. 6; pp. 1872 - 1877
• Main Authors: LIN, Jyi-Tsong, LIN, Po-Hsieh, ENG, Yi-Chuen, CHEN, Yun-Ru
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.06.2013; Institute of Electrical and Electronics Engineers
• Subjects: Applied sciences; Body regions; Capacitorless 1T-DRAM; Design. Technologies. Operation analysis. Testing; Electronics; Exact sciences and technology; Integrated circuits; Integrated circuits by function (including memories and processors); Logic gates; MOSFET; Performance evaluation; Programming; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Silicon; silicon-on-insulator technology; Transient analysis; Transistors; trench body structure; Performance evaluation; Voltage threshold; MOSFET; silicon-on-insulator technology; Circuit design; Random access memory; Silicon on insulator technology; Non volatile memory; Electrical transients; Transient analysis; Computer aided design; Floating body; Electrical characteristic; Dynamic random access memory; Capacitor less circuit; MOS technology; Transient response; trench body structure; Trench technology; Retention factor; Self aligned technology; Capacitorless 1T-DRAM; Software tool; Manufacturing process; Integrated circuit
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2013.2259171

A vertical silicon-on-insulator (VSOI)-based capacitorless 1T-DRAM cell with a trench body structure is proposed. The trench body is added as an additional neutral region under the device channel region through a self-aligned fabrication process in a 300 nm wide VSOI MOSFET that enables the device to separate the hole storage region and sense electron current region without extra area penalty. With the holes stored in the trench body, the floating-body effect occurs and affects the threshold voltage significantly. A Synopsys TCAD software tool is also used to evaluate the device performance for DC and transient analysis. The electrical and transient characteristics confirm how the proposed device with trench body can be used perfectly as a 1T-DRAM application to achieve desirable performance in terms of a larger programming window and longer retention time.