Double-Emitter HCBT Structure-A High-Voltage Bipolar Transistor for BiCMOS Integration

• Published in: IEEE transactions on electron devices Vol. 59; no. 12; pp. 3647 - 3650
• Main Authors: Koricic, M., Suligoj, T., Mochizuki, H., Morita, S., Shinomura, K., Imai, H.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.12.2012; Institute of Electrical and Electronics Engineers
• Subjects: Applied sciences; BiCMOS integrated circuits; BiCMOS technology; Bipolar transistors; charge sharing; CMOS integrated circuits; Design. Technologies. Operation analysis. Testing; Electronics; Exact sciences and technology; Fabrication; fully depleted collector; high-voltage bipolar transistors; High-voltage techniques; horizontal current bipolar transistor (HCBT); Integrated circuits; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Transistors; High voltage transistor; Transmitter; Mask; fully depleted collector; Bipolar transistor; BiCMOS technology; Electric field; high-voltage bipolar transistors; High voltage; Complementary MOS technology; Collector; horizontal current bipolar transistor (HCBT); Bipolar technology; charge sharing; Base collector junction
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2012.2216881

Fabrication of a novel high-voltage double-emitter horizontal current bipolar transistor (HCBT) structure integrated with the standard 0.18-μm CMOS and high-speed HCBT is presented. The device takes advantage of 3-D collector charge sharing to achieve full depletion of the intrinsic collector region and to limit the electric field at the base-collector junction. Transistors with BV CEO = 12.6 V, f T ·BV CEO = 160 GHz·V , and β·VA = 28 700 V are demonstrated. The device is fabricated in HCBT BiCMOS process flow without the use of additional lithography masks and represents a zero-cost solution for integration of a high-voltage bipolar device.