Influence of a pre-deposited carbon submonolayer on the Ge island nucleation on Si(001)
Si surfaces manipulated by a carbon (C) pre-deposition have been used to modify the growth morphology of Ge islands. In situ reflection high-energy electron diffraction and x-ray photoelectron diffraction and ex situ atomic force microscopy studies have been conducted for constant C seeding and vary...
Saved in:
Published in | Journal of applied physics Vol. 93; no. 9; pp. 5069 - 5074 |
---|---|
Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
01.05.2003
|
Online Access | Get full text |
Cover
Loading…
Summary: | Si surfaces manipulated by a carbon (C) pre-deposition have been used to modify the growth morphology of Ge islands. In situ reflection high-energy electron diffraction and x-ray photoelectron diffraction and ex situ atomic force microscopy studies have been conducted for constant C seeding and varying growth temperatures and Ge coverages, with the aim of deepening the understanding of the relevant Ge quantum dot formation. With temperatures ranging from 400 to 600 °C, well structured Ge islands grow in a Volmer–Weber mode as soon as 0.4 ML of C and 1 ML of Ge are deposited. Strongly modified behaviors are nevertheless observed by changing the Ge growth temperature from 500 to 600 °C. By increasing the Ge coverage from 1 to 6 ML at 500 °C, the island height increases at constant density, whereas, at 600 °C, a strong reduction of the density is observed, with a three-dimensional-two-dimensional transition probably due to a partial Ge intermixing in the Si matrix. These different nucleation schemes are connected with varying evolutions of the initial C-related c(4×4) reconstruction. |
---|---|
ISSN: | 0021-8979 1089-7550 |
DOI: | 10.1063/1.1562747 |