Direct Detection of Low-Energy Electrons With a Novel CMOS APS Sensor

Direct detection of low-energy electrons (500-2000 eV) with a novel back-thinned CMOS active pixel sensor (APS) is reported in this paper. The sensor was installed in a JEOL 6400F scanning electron microscope to quantitatively test its linearity and spatial resolution by a focused electron beam. The...

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Bibliographic Details
Published inIEEE transactions on electron devices Vol. 59; no. 12; pp. 3594 - 3600
Main Authors Xiaoping Zha, El-Gomati, M. M., Li Chen, Walker, C., Clark, A. T., Turchetta, R.
Format Journal Article
LanguageEnglish
Published New York, NY IEEE 01.12.2012
Institute of Electrical and Electronics Engineers
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Summary:Direct detection of low-energy electrons (500-2000 eV) with a novel back-thinned CMOS active pixel sensor (APS) is reported in this paper. The sensor was installed in a JEOL 6400F scanning electron microscope to quantitatively test its linearity and spatial resolution by a focused electron beam. The obtained results show good linearity at electron beam energy values from 500 to 2000 eV. The full-width at half-maximum spatial resolution was around 2 pixels, a limit set by charge diffusion in the epilayer. These results show that this CMOS APS sensor is appropriate for low-energy electron detection providing the benefits of direct detection for many applications.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2012.2219623