Direct Detection of Low-Energy Electrons With a Novel CMOS APS Sensor
Direct detection of low-energy electrons (500-2000 eV) with a novel back-thinned CMOS active pixel sensor (APS) is reported in this paper. The sensor was installed in a JEOL 6400F scanning electron microscope to quantitatively test its linearity and spatial resolution by a focused electron beam. The...
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Published in | IEEE transactions on electron devices Vol. 59; no. 12; pp. 3594 - 3600 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
New York, NY
IEEE
01.12.2012
Institute of Electrical and Electronics Engineers |
Subjects | |
Online Access | Get full text |
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Summary: | Direct detection of low-energy electrons (500-2000 eV) with a novel back-thinned CMOS active pixel sensor (APS) is reported in this paper. The sensor was installed in a JEOL 6400F scanning electron microscope to quantitatively test its linearity and spatial resolution by a focused electron beam. The obtained results show good linearity at electron beam energy values from 500 to 2000 eV. The full-width at half-maximum spatial resolution was around 2 pixels, a limit set by charge diffusion in the epilayer. These results show that this CMOS APS sensor is appropriate for low-energy electron detection providing the benefits of direct detection for many applications. |
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ISSN: | 0018-9383 1557-9646 |
DOI: | 10.1109/TED.2012.2219623 |