Analysis and Modeling of the Temperature-Dependent Nonlinearity of Intrinsic Capacitances in AlGaN/GaN HEMTs

Modeling the temperature-dependent nonlinearity of intrinsic capacitances in AlGaN/GaN high electron mobility transistors (HEMTs) improves model accuracy. In this letter, extraction results indicate that the current modeling methods cannot accurately reflect the variations of nonlinearity in intrins...

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Bibliographic Details
Published inIEEE microwave and wireless components letters Vol. 31; no. 4; pp. 373 - 376
Main Authors Luo, Haorui, Zhong, Zheng, Hu, Wenrui, Guo, Yongxin
Format Journal Article
LanguageEnglish
Published IEEE 01.04.2021
Subjects
AlGaN/GaN high electron mobility transistors (HEMTs)
Aluminum gallium nitride
Capacitance
HEMTs
intrinsic capacitances
large-signal modeling
MODFETs
Temperature dependence
Temperature measurement
thermal effects
Wide band gap semiconductors
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Summary:Modeling the temperature-dependent nonlinearity of intrinsic capacitances in AlGaN/GaN high electron mobility transistors (HEMTs) improves model accuracy. In this letter, extraction results indicate that the current modeling methods cannot accurately reflect the variations of nonlinearity in intrinsic capacitances with temperature. This letter analyzes the causes of unmodeled phenomena and characterizes them based on device physics. Verifications show that the improved intrinsic capacitance model in this letter effectively enhances the accuracy of the HEMT model at non-nominal temperatures.
ISSN:1531-1309
1558-1764
DOI:10.1109/LMWC.2021.3057444