New Formulation of Cardiff Behavioral Model Including DC Bias Voltage Dependence

A new mathematical formulation for the Cardiff nonlinear behavioral model is presented in this work which includes the dc bias voltages (drain and gate) into the model. It has been verified by modeling a GaN on SiC high electron mobility transistor (HEMT) at 3.5 GHz. For the case presented, interpol...

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Bibliographic Details
Published inIEEE microwave and wireless components letters Vol. 32; no. 6; pp. 607 - 610
Main Authors Azad, Ehsan M, Bell, James J, Quaglia, Roberto, Rubio, Jorge J Moreno, Tasker, Paul J
Format Journal Article
LanguageEnglish
Published IEEE 01.06.2022
Subjects
Behavioral model
Data models
Load modeling
load–pull
Logic gates
Mathematical models
nonlinear device modeling
power amplifier
Radio frequency
Solid modeling
Voltage measurement
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Summary:A new mathematical formulation for the Cardiff nonlinear behavioral model is presented in this work which includes the dc bias voltages (drain and gate) into the model. It has been verified by modeling a GaN on SiC high electron mobility transistor (HEMT) at 3.5 GHz. For the case presented, interpolation of load-pull data has resulted in a more than 90% reduction in the density of the load-pull data required to generate a nonlinear behavioral model over a wide range of dc bias points.
ISSN:1531-1309
1558-1764
DOI:10.1109/LMWC.2022.3140653