Pt-doped TiO2-based sensors for detecting SF6 decomposition components

• Published in: IEEE transactions on dielectrics and electrical insulation Vol. 22; no. 3; pp. 1559 - 1566
• Main Authors: Zhang, Xiaoxing, Tie, Jing, Chen, Qinchuan, Xiao, Peng, Zhou, Ming
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.06.2015; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Doping; Doping amount; Electric utilities; Gas detectors; Gases; Resistance; Sensor phenomena and characterization; Sensor response; Sensors; SF 6 decomposition components; Sulfur hexafluoride; Temperature sensors; TiO 2 nanotube array
• ISSN: 1070-9878; 1558-4135
• DOI: 10.1109/TDEI.2015.7116351

Detection of partial discharge and analysis of SF 6 gas components in gas-insulated switchgear are important for diagnosis and operating state assessment of power equipment. The gas-sensing properties of the existing TiO 2 nanotube (TiO 2 NT) array-based and the Pt-doped TiO 2 NT-based sensors were investigated for the components of SF 6 decomposition. Four sensors with different amounts of Pt-doped TiO2NTs are prepared using constant current method. The sensing responses of the sensors to the main decomposition gases of SF 6 (i.e., SO 2 , SOF 2 and SO 2 F 2 ) are examined, and the gas-sensing characteristic curves are comparatively analyzed. In addition, the mechanisms of the sensitive responses are discussed. Results show that a higher doping amount of Pt benefits the detection of SO 2 F 2 , whereas a lower doping amount is suitable for detecting SO 2 , which is similar with the capabilities of the intrinsic TiO 2 NT sensor. Moreover, the working temperature of the Pt-doped TiO 2 NT sensor is lower than that of the intrinsic TiO 2 NT sensor.