Kinetic modeling of hydrogen adsorption/absorption in thin films on hydrogen-sensitive field-effect devices: Observation of large hydrogen-induced dipoles at the Pd-SiO2 interface

• Published in: Journal of applied physics Vol. 78; no. 2; pp. 988 - 996
• Main Authors: Fogelberg, J., Eriksson, M., Dannetun, H., Petersson, L.-G.
• Format: Journal Article
• Language: English
• Published: 15.07.1995
• ISSN: 0021-8979; 1089-7550
• DOI: 10.1063/1.360293

A kinetic modeling of the hydrogen interaction with a Pd-SiO2-Si (Pd-MOS) device is reported. The model is fitted to a number of experimental results, mainly from mass spectrometric desorption measurements. The new results verify an older description of the energetics of hydrogen adsorption states at the Pd/SiO2 interface in the sense that the adsorption may be described by a so-called Temkin isotherm; however, several new findings have to be incorporated into the model in order to obtain a consistent picture. The initial heat of adsorption at the interface is around 0.8 eV/hydrogen atom. The number of adsorption sites at the interface is considerably smaller than at the surface, 6×1017 m−2 versus 1.5×1019 m−2. Furthermore, the interface hydrogen atoms are strongly polarized. An average value of 2 Debye is obtained. It is the large hydrogen polarization at the Pd/SiO2 interface and not a large concentration of adsorbed hydrogen atoms per se which accounts for the very high sensitivity of a Pd-MOS device as hydrogen sensor.