A Quasi-Analytical Model for Double-Gate Tunneling Field-Effect Transistors
Tunneling field-effect transistors (TFETs) are being widely investigated as a post-CMOS technology; however, despite significant experimental efforts, no quantitatively accurate device models are available. We derive an expression which provides the complete current characteristics of the double-gat...
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| Published in | IEEE electron device letters Vol. 33; no. 10; pp. 1468 - 1470 |
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| Main Authors | , |
| Format | Journal Article |
| Language | English |
| Published |
New York, NY
IEEE
01.10.2012
Institute of Electrical and Electronics Engineers |
| Subjects | |
| Online Access | Get full text |
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| Abstract | Tunneling field-effect transistors (TFETs) are being widely investigated as a post-CMOS technology; however, despite significant experimental efforts, no quantitatively accurate device models are available. We derive an expression which provides the complete current characteristics of the double-gate TFET and demonstrate its agreement with simulation. This model will be useful in the design and circuit analysis of TFETs. |
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| AbstractList | Tunneling field-effect transistors (TFETs) are being widely investigated as a post-CMOS technology; however, despite significant experimental efforts, no quantitatively accurate device models are available. We derive an expression which provides the complete current characteristics of the double-gate TFET and demonstrate its agreement with simulation. This model will be useful in the design and circuit analysis of TFETs. |
| Author | Pan, A. Chi On Chui |
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| Keywords | Field effect transistor tunnel field-effect transistor (TFET) Complementary MOS technology Network analysis Tunnel effect Analytical method tunneling Double gate (DG) Dual gate field effect transistor Tunnel transistors |
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| SubjectTerms | Analytical models Applied sciences Design. Technologies. Operation analysis. Testing Doping Double gate (DG) Electric potential Electric, optical and optoelectronic circuits Electronics Exact sciences and technology Integrated circuits Logic gates Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductor process modeling Theoretical study. Circuits analysis and design Transistors tunnel field-effect transistor (TFET) Tunneling |
| Title | A Quasi-Analytical Model for Double-Gate Tunneling Field-Effect Transistors |
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