A Quasi-Analytical Model for Double-Gate Tunneling Field-Effect Transistors

Tunneling field-effect transistors (TFETs) are being widely investigated as a post-CMOS technology; however, despite significant experimental efforts, no quantitatively accurate device models are available. We derive an expression which provides the complete current characteristics of the double-gat...

Full description

Saved in:
Bibliographic Details
Published inIEEE electron device letters Vol. 33; no. 10; pp. 1468 - 1470
Main Authors Pan, A., Chi On Chui
Format Journal Article
LanguageEnglish
Published New York, NY IEEE 01.10.2012
Institute of Electrical and Electronics Engineers
Subjects
Analytical models
Applied sciences
Design. Technologies. Operation analysis. Testing
Doping
Double gate (DG)
Electric potential
Electric, optical and optoelectronic circuits
Electronics
Exact sciences and technology
Integrated circuits
Logic gates
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductor process modeling
Theoretical study. Circuits analysis and design
Transistors
tunnel field-effect transistor (TFET)
Tunneling
Field effect transistor
tunnel field-effect transistor (TFET)
Complementary MOS technology
Network analysis
Tunnel effect
Analytical method
tunneling
Double gate (DG)
Dual gate field effect transistor
Tunnel transistors
Online AccessGet full text

Cover

More Information
Summary:Tunneling field-effect transistors (TFETs) are being widely investigated as a post-CMOS technology; however, despite significant experimental efforts, no quantitatively accurate device models are available. We derive an expression which provides the complete current characteristics of the double-gate TFET and demonstrate its agreement with simulation. This model will be useful in the design and circuit analysis of TFETs.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2012.2208933