SIMS depth profiling of ‘frozen’ samples: in search of ultimate depth resolution regime

We have performed secondary ion mass spectrometry depth profiling analysis of III–V based hetero‐structures at different target temperatures and found that both the surface segregation and surface roughness caused by ion sputtering can be radically reduced if the sample temperature is lowered to −15...

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Bibliographic Details
Published inSurface and interface analysis Vol. 49; no. 2; pp. 145 - 148
Main Authors Kudriavtsev, Y., Hernandez, A., Asomoza, R., Gallardo, S., Lopez, M., Moiseev, K.
Format Journal Article
LanguageEnglish
Published Bognor Regis Wiley Subscription Services, Inc 01.02.2017
Subjects
Depth profiling
depth resolution
Flooding
Freezing
Interface analysis
Secondary ion mass spectrometry
Segregations
Semiconductors
SIMS
Surface roughness
surface segregation
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Summary:We have performed secondary ion mass spectrometry depth profiling analysis of III–V based hetero‐structures at different target temperatures and found that both the surface segregation and surface roughness caused by ion sputtering can be radically reduced if the sample temperature is lowered to −150 °C. The depth profiling of ‘frozen’ samples can be a good alternative to sample rotation and oxygen flooding used for ultra‐low‐energy depth profiling of compound semiconductors. Copyright © 2016 John Wiley & Sons, Ltd.
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ISSN:0142-2421
1096-9918
DOI:10.1002/sia.6067