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Determining the Wafer Temperature in Atmospheric Thermal Silicon Oxidation Reactors

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Bibliographic Details
Published inJournal of the Electrochemical Society Vol. 142; no. 5; pp. L67 - L69
Main Authors Philipossian, A., Soleimani, H. R.
Format Journal Article
LanguageEnglish
Published Pennington, NJ Electrochemical Society 01.05.1995
Subjects
Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Computer simulation
Growth rate
Experimental study
Layer thickness
Non uniform distribution
Temperature measurement
Microelectronic fabrication
Chemical reactor
Silicon Oxides
Oxidation
Simulation model
Wafer
Production process
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ISSN:0013-4651
1945-7111
DOI:10.1149/1.2048651
  • ikona citování Cite this
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