APA (7th ed.) Citation

Li, Z., Wang, X., & Jiang, Y. (2024). Metal Boundary Effect Mitigation by HKMG Thermal Process Optimization in FinFET Integration Technology. IEEE transactions on electron devices, 71(4), 2335-2341. https://doi.org/10.1109/TED.2024.3370119

Chicago Style (17th ed.) Citation

Li, Zhao-Yang, Xue-Jiao Wang, and Yu-Long Jiang. "Metal Boundary Effect Mitigation by HKMG Thermal Process Optimization in FinFET Integration Technology." IEEE Transactions on Electron Devices 71, no. 4 (2024): 2335-2341. https://doi.org/10.1109/TED.2024.3370119.

MLA (9th ed.) Citation

Li, Zhao-Yang, et al. "Metal Boundary Effect Mitigation by HKMG Thermal Process Optimization in FinFET Integration Technology." IEEE Transactions on Electron Devices, vol. 71, no. 4, 2024, pp. 2335-2341, https://doi.org/10.1109/TED.2024.3370119.