Double perovskite Bi2FeMnO6/TiO2 thin film heterostructure device for neuromorphic computing

• Published in: Applied physics letters Vol. 124; no. 25
• Main Authors: Li, Dong-Liang, Zhong, Wen-Min, Tang, Xin-Gui, He, Qin-yu, Jiang, Yan-Ping, Liu, Qiu-Xiang
• Format: Journal Article
• Language: English
• Published: Melville American Institute of Physics 17.06.2024
• Subjects: Ferroelectricity; Heterostructures; Memory devices; Multiferroic materials; Neuromorphic computing; Perovskites; Physical properties; Random access memory; Silicon substrates; Switching; Synapses; Thin films; Titanium dioxide
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/5.0205429

Multiferroic materials have important research significance in the fields of magnetic random-access memory, ferroelectric random-access memory, resistive random-access memory, and neuromorphic computing devices due to their excellent and diverse physical properties. In this work, a solution of Bi2FeMnO6 was prepared using a solution-based method, and an Au/Bi2FeMnO6/TiO2 heterostructure device was fabricated on a Si substrate. X-ray diffraction and transmission electron microscopy data indicate that the Bi2FeMnO6 films have hexagonal R3c symmetry structures. The Bi2FeMnO6 film exhibits ferroelectricity with a fine remanent polarization. In addition, the Bi2FeMnO6-based devices have excellent switching ratios of 6.37 × 105. A larger switching ratio can provide a multi-resistance state for the device, which is beneficial for the simulation of synapses. Hence, it effectively emulates excitatory postsynaptic currents, paired-pulse facilitation, and long-term plasticity of synapses and achieves recognition accuracy of 95% in neuromorphic computing. We report a promising material for the development of various nonvolatile memories and neuromorphic synaptic devices.