Optical and electrical properties of 4H-SiC irradiated with fast neutrons and high-energy heavy ions

• Published in: Semiconductors (Woodbury, N.Y.) Vol. 38; no. 10; pp. 1187 - 1191
• Main Authors: Kalinina, E. V., Kholuyanov, G. F., Onushkin, G. A., Davydov, D. V., Strel’chuk, A. M., Konstantinov, A. O., Hallén, A., Nikiforov, A. Yu, Skuratov, V. A., Havancsak, K.
• Format: Journal Article
• Language: English
• Published: United States 01.10.2004
• Subjects: ALUMINIUM IONS; BISMUTH IONS; CHEMICAL VAPOR DEPOSITION; DEEP LEVEL TRANSIENT SPECTROSCOPY; DEFECTS; ELECTRIC CONDUCTIVITY; epitaxial layers; EPITAXY; EXPERIMENTAL DATA; FAST NEUTRONS; HEAVY IONS; ION BEAMS; IRRADIATION; LAYERS; level transient spectroscopy; MATERIALS SCIENCE; MEV RANGE 100-1000; MONOCRYSTALS; PHOTOLUMINESCENCE; POINT DEFECTS; radiation defects; SEMICONDUCTOR MATERIALS; SILICON CARBIDES; silicon-carbide
• ISSN: 1063-7826; 1090-6479; 1090-6479
• DOI: 10.1134/1.1808826

Photoluminescence and deep-level transient spectroscopy are used to study the effect of irradiation with fast neutrons and high-energy Kr (235 MeV) and Bi (710 MeV) ions on the optical and electrical properties of high-resistivity high-purity n-type 4H-SiC epitaxial layers grown by chemical vapor deposition. Electrical characteristics were studied using the barrier structures based on these epitaxial layers: Schottky barriers with Al and Cr contacts and p{sup +}-n-n{sup +} diodes fabricated by Al ion implantation. According to the experimental data obtained, neutrons and high-energy ions give rise to the same defect-related centers. The results show that, even for the extremely high ionization density (34 keV/nm) characteristic of Bi ions, the formation of the defect structure in SiC single crystals is governed by energy losses of particles due to elastic collisions.