Electric field-controlled deterministic magnetization reversal in nanomagnet Fe3Si/PMN-PT multiferroic heterostructures

• Published in: Applied physics letters Vol. 123; no. 15
• Main Authors: Su, Zheng, Guo, Xiao-Bin, Qiu, Wen-Hai, He, Ang, Li, Wen-Hua, Jiang, Yan-Ping, Li, Shui-Feng, Tang, Xin-Gui
• Format: Journal Article
• Language: English
• Published: Melville American Institute of Physics 09.10.2023
• Subjects: Applied physics; Electric fields; Heterostructures; Hysteresis loops; Iron silicide; Magnetic anisotropy; Magnetic domains; Magnetic switching; Magnetization reversal; Memory devices; Piezoelectricity; Spintronics; Substrates
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/5.0160724

Pure electric field-controlled 180° magnetization switching plays a vital role in low-power magnetoelectric memory devices. Using micromagnetic simulation, we engineered a square-shaped epitaxial Fe3Si nanomagnet on a PMN-PT piezoelectric substrate to make the magnetic easy axis slightly deviate 18° from the piezostrain axis, aiming to break the symmetry of the magnetization distribution and achieve deterministic magnetization reversal paths. Under the coaction of a magnetic field and an electric field, the simulated magnetic hysteresis loops and magnetic domain patterns reveal a fourfold to twofold magnetic anisotropy transition and magnetization reversal paths. Stimulated by pure electric field-induced piezoelectric strain, deterministic 180° magnetization reversals are accomplished by the two successive clockwise 90° switching process. The results help to comprehend electrically regulated deterministic magnetization reversal and pave an avenue for designing multistate spintronics devices.