AC vs. DC bias-enhanced nucleation of highly oriented diamond on silicon (100)

• Published in: Journal of the Electrochemical Society Vol. 149; no. 2; pp. G114 - G117
• Main Authors: WOLTER, S. D, OKUZUMI, F, PRATER, J. T, SITAR, Z
• Format: Journal Article
• Language: English
• Published: Pennington, NJ Electrochemical Society 01.02.2002
• Subjects: Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Crystal growth; CVD; Crystal orientation; Synthetic diamond; Semiconductor substrate; Electrical polarization; Crystal nucleation; Silicon; Crystal faces