AC vs. DC bias-enhanced nucleation of highly oriented diamond on silicon (100)

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Bibliographic Details
Published inJournal of the Electrochemical Society Vol. 149; no. 2; pp. G114 - G117
Main Authors WOLTER, S. D, OKUZUMI, F, PRATER, J. T, SITAR, Z
Format Journal Article
LanguageEnglish
Published Pennington, NJ Electrochemical Society 01.02.2002
Subjects
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Cross-disciplinary physics: materials science; rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings; film growth and epitaxy
Physics
Crystal growth
CVD
Crystal orientation
Synthetic diamond
Semiconductor substrate
Electrical polarization
Crystal nucleation
Silicon
Crystal faces
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ISSN:0013-4651
1945-7111
DOI:10.1149/1.1430720