Simulation of Bipolar-Type Resistive Switching Devices Using a Recursive Approach to the Dynamic Memdiode Model

• Published in: IEEE electron device letters Vol. 44; no. 9; p. 1
• Main Authors: Miranda, E., Piros, E., Aguirre, F.L., Kim, T., Schreyer, P., Gehrunger, J., Oster, T., Hofmann, K., Sune, J., Hochberger, C., Alff, L.
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.09.2023; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Circuits; Differential equations; Integrated circuit modeling; Mathematical models; memristor; Numerical models; OxRAM; Recursive methods; ReRAM; Resistance; resistive switching; Simulation; Switches; Switching; Voltage
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2023.3298023

Very often researchers in the field of resistive switching devices or memristors need to model their experimental data using a compact representation without dealing with the complexities of a circuit simulator or a differential equation solver. Moreover, once a given device is simulated, one is always tempted to find out what would be the effect of changing the value or dependence of one or several model parameters in a simple and straightforward way. In this letter, we provide such a tool. The dynamic memdiode model for the conduction characteristics of resistive switching devices has been rewritten and simplified so as to comply with these demanding requirements. The model formulation is essentially the same except that it is now expressed using a recursive approach fully compatible with its original foundations. This has been possible thanks to the inherent symmetry of the model equations and to the unification of the physical description of the set and reset processes. We show how the proposed approach can be used as a test bench for different hypotheses, in particular, we focus here on the role played by the characteristic switching times during the state transitions.