Mobility Enhancement in Polycrystalline Silicon Thin Film Transistors due to the Dehydrogenation Mechanism

We investigated the mechanism of mobility enhancement after the dehydrogenation process in polycrystalline silicon (poly-Si) thin films. The dehydrogenation process was performed by using an in-situ CVD chamber in a N 2 ambient or an ex-situ furnace in air ambient. We observed that the dehydrogenate...

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Bibliographic Details
Published inJournal of the Korean Physical Society Vol. 73; no. 9; pp. 1329 - 1333
Main Authors Lee, Seok Ryoul, Sung, Sang-Yun, Lee, Kyong Taik, Cho, Seong Gook, Lee, Ho Seong
Format Journal Article
LanguageEnglish
Published Seoul The Korean Physical Society 01.11.2018
Springer Nature B.V
한국물리학회
Subjects
Dehydrogenation
Mathematical and Computational Physics
Particle and Nuclear Physics
Photovoltaic cells
Physics
Physics and Astronomy
Polycrystals
Preferred orientation
Semiconductor devices
Silicon films
Theoretical
Thin film transistors
Thin films
Valence band
물리학
Thin film transistor
Low-temperature poly silicon
Dehydrogenation
Crystallization
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Summary:We investigated the mechanism of mobility enhancement after the dehydrogenation process in polycrystalline silicon (poly-Si) thin films. The dehydrogenation process was performed by using an in-situ CVD chamber in a N 2 ambient or an ex-situ furnace in air ambient. We observed that the dehydrogenated poly-Si in a N 2 ambient had a lower oxygen concentration than the dehydrogenated poly-Si annealed in an air ambient. The in-situ dehydrogenation increased the (111) preferred orientation of poly-Si and reduced the oxygen concentration in poly-Si thin films, leading to a reduction of the trap density near the valence band. This phenomenon gave rise to an increase of the field-effect mobility of the poly-Si thin film transistor.
ISSN:0374-4884
1976-8524
DOI:10.3938/jkps.73.1329