Lattice defects in high-dose As implantation into localized Si area

• Published in: Japanese Journal of Applied Physics Vol. 27; no. 12; pp. 2209 - 2217
• Main Authors: TAMURA, M, HORIUCHI, M
• Format: Journal Article
• Language: English
• Published: Tokyo Japanese journal of applied physics 01.12.1988
• Subjects: Condensed matter: structure, mechanical and thermal properties; Defects and impurities in crystals; microstructure; Doping and impurity implantation in iii-v and ii-vi semiconductors; Exact sciences and technology; Physics; Structure of solids and liquids; crystallography; Ion implantation; Semiconductor materials; Irradiation; Silicon; Crystal defect; Experimental study; Electron microscopy; Arsenic Atomic ions
• ISSN: 0021-4922; 1347-4065
• DOI: 10.1143/JJAP.27.2209

Cross-sectional transmission electron microscopy observations have been carried out to clarify two-dimensional depth distributions of lattice defects generated in high-dose (5×10 15 and 2×10 16 ions/cm 2 ), 80 and 150 keV As-implanted, and annealed Si through 1.0 and 1.5 µm windows on (100) Si. Amorphous Si (a-Si) layer thicknesses formed by implantation range between projected range, R p , +(5∼6) standards deviation, Δ R p , with a lateral spread of about 0.18 times a-Si thickness under the mask edge. Typical post-annealed, induced defects in such amorphous layers are mask edge defects composed of dislocation lines caused by a complicated process for recovering mask edge amorphous layers, together with commonly observed dislocation loops in high-dose As implantation. Interaction between dislocation loops and knocked-on oxygen atoms is discussed, particularly concerning the elimination or survival of As-rich precipitate-induced dislocation loops.