Characteristics of a field-effect transistor fabricated with electropolymerized thin film

The preparation and characteristics of the solid-state field-effect transistor (FET) based on poly(p,p'-biphenol)(PBP) thin film prepared by electropolymerization of p,p'-biphenol are presented. The PBP-based FET displayed excellent drain current ( I D )-drain voltage ( V D ) characteristi...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 27; no. 3; pp. L448 - L450
Main Authors OYAMA, N, YOSHIMURA, F, OHSAKA, T, KOEZUKA, H, ANDO, T
Format Journal Article
LanguageEnglish
Published Tokyo Japanese journal of applied physics 01.03.1988
Subjects
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Field effect transistor
Polyphenol
Thin film transistor
Manufacturing
Electrochemical polymerization
Electrical characteristic
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Summary:The preparation and characteristics of the solid-state field-effect transistor (FET) based on poly(p,p'-biphenol)(PBP) thin film prepared by electropolymerization of p,p'-biphenol are presented. The PBP-based FET displayed excellent drain current ( I D )-drain voltage ( V D ) characteristics for various gate voltages. The I D - V D characteristics were analyzed as in a conventional MOS transistor.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.27.L448