Characteristics of a field-effect transistor fabricated with electropolymerized thin film
The preparation and characteristics of the solid-state field-effect transistor (FET) based on poly(p,p'-biphenol)(PBP) thin film prepared by electropolymerization of p,p'-biphenol are presented. The PBP-based FET displayed excellent drain current ( I D )-drain voltage ( V D ) characteristi...
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Published in | Japanese Journal of Applied Physics Vol. 27; no. 3; pp. L448 - L450 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
Tokyo
Japanese journal of applied physics
01.03.1988
|
Subjects | |
Online Access | Get full text |
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Summary: | The preparation and characteristics of the solid-state field-effect transistor (FET) based on poly(p,p'-biphenol)(PBP) thin film prepared by electropolymerization of p,p'-biphenol are presented. The PBP-based FET displayed excellent drain current (
I
D
)-drain voltage (
V
D
) characteristics for various gate voltages. The
I
D
-
V
D
characteristics were analyzed as in a conventional MOS transistor. |
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ISSN: | 0021-4922 1347-4065 |
DOI: | 10.1143/JJAP.27.L448 |