Si Heterojunction Solar Cells: A Simulation Study of the Design Issues

• Published in: IEEE transactions on electron devices Vol. 63; no. 12; pp. 4788 - 4795
• Main Authors: Islam, Raisul, Nazif, Koosha Nassiri, Saraswat, Krishna C.
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.12.2016; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: CuAlO2; Design optimization; Dipoles; Emitters; Fermi level; fermi level pinning; Heterojunctions; II-VI semiconductor materials; interface passivation; NiO; Passivation; Passivity; Photovoltaic cells; selective contacts; Si heterojunction cell; Silicon; Simulation; Solar cells; TiO2; Titanium dioxide; Zinc oxide; ZnO
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2016.2613057

Silicon heterojunction solar cells having semiconducting oxide-selective contacts can revolutionize the photovoltaic industry with the promise of low cost and high efficiency. In this paper, we have identified the potential design issues of silicon heterojunction cell using simulation. This paper compares two possible electron-selective oxides (TiO 2 and ZnO) and two possible hole-selective oxides (CuAlO 2 and NiO). The Fermi level in the oxide at the oxide/metal interface is pinned by the metal (its workfunction and eventual interface dipoles). We considered this effect, which determines the effective workfunction of the metal contact as opposed to the actual metal workfunction. Our simulation suggests that Fermi level pinning has significant impact on the device performance. We also considered different interface passivation effects and oxide dopings in our simulation. The simulation suggests that high doping in oxides is beneficial to counter balance the effect of poor surface passivation. This paper provides an extensive understanding of the design of Si heterojunction solar cell using band-engineered semiconducting oxide as the selective contact replacing highly doped emitter and back surface field.