Optimization of Lateral Superjunction Based on the Minimum Specific ON-Resistance
The optimization methodology of the minimum specific ON-resistance R ON,min for the lateral superjunction device is proposed based on the concepts of charge and potential electric fields in this paper. From the R ON,min method, a new relationship between R ON and breakdown voltage V B is developed,...
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Published in | IEEE transactions on electron devices Vol. 63; no. 5; pp. 1984 - 1990 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
New York
IEEE
01.05.2016
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subjects | |
Online Access | Get full text |
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Summary: | The optimization methodology of the minimum specific ON-resistance R ON,min for the lateral superjunction device is proposed based on the concepts of charge and potential electric fields in this paper. From the R ON,min method, a new relationship between R ON and breakdown voltage V B is developed, and the analytical formulas are obtained to directly give the doping concentration N and the drift length L d . The calculated results, including the 800 and 1600 V examples, are in good agreement with the simulations. The optimized designs are also compared with the existing experimental and simulated data. It is shown that R ON from the proposed optimization method is minimum, and the methodology of R ON,min is universal. |
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ISSN: | 0018-9383 1557-9646 |
DOI: | 10.1109/TED.2016.2542263 |