Optimization of Lateral Superjunction Based on the Minimum Specific ON-Resistance

• Published in: IEEE transactions on electron devices Vol. 63; no. 5; pp. 1984 - 1990
• Main Authors: Zhang, Wentong, Zhang, Bo, Qiao, Ming, Li, Zehong, Luo, Xiaorong, Li, Zhaoji
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.05.2016; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Design formulas; Doping; Electric breakdown; Electric potential; lateral double-diffused MOS (LDMOS); lateral superjunction (SJ); Mathematical model; Optimization; optimization methodology; Semiconductor process modeling; specific ON-resistance; Substrates; specific ON-resistance; Design formulas; optimization methodology; lateral superjunction (SJ); lateral double-diffused MOS (LDMOS)
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2016.2542263

The optimization methodology of the minimum specific ON-resistance R ON,min for the lateral superjunction device is proposed based on the concepts of charge and potential electric fields in this paper. From the R ON,min method, a new relationship between R ON and breakdown voltage V B is developed, and the analytical formulas are obtained to directly give the doping concentration N and the drift length L d . The calculated results, including the 800 and 1600 V examples, are in good agreement with the simulations. The optimized designs are also compared with the existing experimental and simulated data. It is shown that R ON from the proposed optimization method is minimum, and the methodology of R ON,min is universal.